|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
ST 2SB772S PNP Silicon Epitaxial Transistor Medium Power Low Voltage Transistor The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICM -IB Ptot Tj TS Value 40 30 5 3 7 600 500 150 - 55 to + 150 Unit V V V A A mA mW O C C O Characteristics (Ta = 25 OC) Parameter DC Current Gain at -VCE = 2 V, -IC = 1 A Current Gain Group Q P E Symbol hFE hFE hFE hFE -ICBO -IEBO -VCE(sat) -VBE(sat) fT Cob Min. 100 160 200 30 Typ. 80 45 Max. 200 320 400 1 1 0.5 2 Unit A A V V MHz pF at -VCE = 2 V, -IC = 20 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 3 V Collector-Emitter Saturation Voltage at -IC= 2 A, -IB = 200 mA Base-Emitter Saturation Voltage at -IC= 2 A, -IB = 200 mA Current Gain Bandwidth Product at -VCE = 5 V, -IC = 0.1 A Output Capacitance at -VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 04/10/2006 ST 2SB772S SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 04/10/2006 |
Price & Availability of ST2SB772S |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |